diff options
Diffstat (limited to 'include/linux/mtd/nand.h')
| -rw-r--r-- | include/linux/mtd/nand.h | 44 |
1 files changed, 22 insertions, 22 deletions
diff --git a/include/linux/mtd/nand.h b/include/linux/mtd/nand.h index 9a0108f78..065e1cb4e 100644 --- a/include/linux/mtd/nand.h +++ b/include/linux/mtd/nand.h @@ -24,7 +24,7 @@ * bat later if I did something naughty. * 10-11-2000 SJH Added private NAND flash structure for driver * 10-24-2000 SJH Added prototype for 'nand_scan' function - * 10-29-2001 TG changed nand_chip structure to support + * 10-29-2001 TG changed nand_chip structure to support * hardwarespecific function for accessing control lines * 02-21-2002 TG added support for different read/write adress and * ready/busy line access function @@ -36,14 +36,14 @@ * CONFIG_MTD_NAND_ECC_JFFS2 is not set * 08-10-2002 TG extensions to nand_chip structure to support HW-ECC * - * 08-29-2002 tglx nand_chip structure: data_poi for selecting + * 08-29-2002 tglx nand_chip structure: data_poi for selecting * internal / fs-driver buffer * support for 6byte/512byte hardware ECC * read_ecc, write_ecc extended for different oob-layout * oob layout selections: NAND_NONE_OOB, NAND_JFFS2_OOB, * NAND_YAFFS_OOB * 11-25-2002 tglx Added Manufacturer code FUJITSU, NATIONAL - * Split manufacturer and device ID structures + * Split manufacturer and device ID structures * * 02-08-2004 tglx added option field to nand structure for chip anomalities * 05-25-2004 tglx added bad block table support, ST-MICRO manufacturer id @@ -120,7 +120,7 @@ extern int nand_read_raw (struct mtd_info *mtd, uint8_t *buf, loff_t from, size_ #define NAND_STATUS_READY 0x40 #define NAND_STATUS_WP 0x80 -/* +/* * Constants for ECC_MODES */ @@ -162,12 +162,12 @@ extern int nand_read_raw (struct mtd_info *mtd, uint8_t *buf, loff_t from, size_ #define NAND_CACHEPRG 0x00000008 /* Chip has copy back function */ #define NAND_COPYBACK 0x00000010 -/* AND Chip which has 4 banks and a confusing page / block +/* AND Chip which has 4 banks and a confusing page / block * assignment. See Renesas datasheet for further information */ #define NAND_IS_AND 0x00000020 /* Chip has a array of 4 pages which can be read without * additional ready /busy waits */ -#define NAND_4PAGE_ARRAY 0x00000040 +#define NAND_4PAGE_ARRAY 0x00000040 /* Options valid for Samsung large page devices */ #define NAND_SAMSUNG_LP_OPTIONS \ @@ -186,8 +186,8 @@ extern int nand_read_raw (struct mtd_info *mtd, uint8_t *buf, loff_t from, size_ /* Use a flash based bad block table. This option is passed to the * default bad block table function. */ #define NAND_USE_FLASH_BBT 0x00010000 -/* The hw ecc generator provides a syndrome instead a ecc value on read - * This can only work if we have the ecc bytes directly behind the +/* The hw ecc generator provides a syndrome instead a ecc value on read + * This can only work if we have the ecc bytes directly behind the * data bytes. Applies for DOC and AG-AND Renesas HW Reed Solomon generators */ #define NAND_HWECC_SYNDROME 0x00020000 @@ -218,7 +218,7 @@ struct nand_chip; #if 0 /** * struct nand_hw_control - Control structure for hardware controller (e.g ECC generator) shared among independend devices - * @lock: protection lock + * @lock: protection lock * @active: the mtd device which holds the controller currently */ struct nand_hw_control { @@ -229,8 +229,8 @@ struct nand_hw_control { /** * struct nand_chip - NAND Private Flash Chip Data - * @IO_ADDR_R: [BOARDSPECIFIC] address to read the 8 I/O lines of the flash device - * @IO_ADDR_W: [BOARDSPECIFIC] address to write the 8 I/O lines of the flash device + * @IO_ADDR_R: [BOARDSPECIFIC] address to read the 8 I/O lines of the flash device + * @IO_ADDR_W: [BOARDSPECIFIC] address to write the 8 I/O lines of the flash device * @read_byte: [REPLACEABLE] read one byte from the chip * @write_byte: [REPLACEABLE] write one byte to the chip * @read_word: [REPLACEABLE] read one word from the chip @@ -253,7 +253,7 @@ struct nand_hw_control { * be provided if a hardware ECC is available * @erase_cmd: [INTERN] erase command write function, selectable due to AND support * @scan_bbt: [REPLACEABLE] function to scan bad block table - * @eccmode: [BOARDSPECIFIC] mode of ecc, see defines + * @eccmode: [BOARDSPECIFIC] mode of ecc, see defines * @eccsize: [INTERN] databytes used per ecc-calculation * @eccbytes: [INTERN] number of ecc bytes per ecc-calculation step * @eccsteps: [INTERN] number of ecc calculation steps per page @@ -265,7 +265,7 @@ struct nand_hw_control { * @phys_erase_shift: [INTERN] number of address bits in a physical eraseblock * @bbt_erase_shift: [INTERN] number of address bits in a bbt entry * @chip_shift: [INTERN] number of address bits in one chip - * @data_buf: [INTERN] internal buffer for one page + oob + * @data_buf: [INTERN] internal buffer for one page + oob * @oob_buf: [INTERN] oob buffer for one eraseblock * @oobdirty: [INTERN] indicates that oob_buf must be reinitialized * @data_poi: [INTERN] pointer to a data buffer @@ -280,20 +280,20 @@ struct nand_hw_control { * @bbt: [INTERN] bad block table pointer * @bbt_td: [REPLACEABLE] bad block table descriptor for flash lookup * @bbt_md: [REPLACEABLE] bad block table mirror descriptor - * @badblock_pattern: [REPLACEABLE] bad block scan pattern used for initial bad block scan + * @badblock_pattern: [REPLACEABLE] bad block scan pattern used for initial bad block scan * @controller: [OPTIONAL] a pointer to a hardware controller structure which is shared among multiple independend devices * @priv: [OPTIONAL] pointer to private chip date */ - + struct nand_chip { void __iomem *IO_ADDR_R; void __iomem *IO_ADDR_W; - + u_char (*read_byte)(struct mtd_info *mtd); void (*write_byte)(struct mtd_info *mtd, u_char byte); u16 (*read_word)(struct mtd_info *mtd); void (*write_word)(struct mtd_info *mtd, u16 word); - + void (*write_buf)(struct mtd_info *mtd, const u_char *buf, int len); void (*read_buf)(struct mtd_info *mtd, u_char *buf, int len); int (*verify_buf)(struct mtd_info *mtd, const u_char *buf, int len); @@ -358,7 +358,7 @@ struct nand_chip { * @name: Identify the device type * @id: device ID code * @pagesize: Pagesize in bytes. Either 256 or 512 or 0 - * If the pagesize is 0, then the real pagesize + * If the pagesize is 0, then the real pagesize * and the eraseize are determined from the * extended id bytes in the chip * @erasesize: Size of an erase block in the flash device. @@ -387,7 +387,7 @@ struct nand_manufacturers { extern struct nand_flash_dev nand_flash_ids[]; extern struct nand_manufacturers nand_manuf_ids[]; -/** +/** * struct nand_bbt_descr - bad block table descriptor * @options: options for this descriptor * @pages: the page(s) where we find the bbt, used with option BBT_ABSPAGE @@ -398,14 +398,14 @@ extern struct nand_manufacturers nand_manuf_ids[]; * @version: version read from the bbt page during scan * @len: length of the pattern, if 0 no pattern check is performed * @maxblocks: maximum number of blocks to search for a bbt. This number of - * blocks is reserved at the end of the device where the tables are + * blocks is reserved at the end of the device where the tables are * written. * @reserved_block_code: if non-0, this pattern denotes a reserved (rather than * bad) block in the stored bbt - * @pattern: pattern to identify bad block table or factory marked good / + * @pattern: pattern to identify bad block table or factory marked good / * bad blocks, can be NULL, if len = 0 * - * Descriptor for the bad block table marker and the descriptor for the + * Descriptor for the bad block table marker and the descriptor for the * pattern which identifies good and bad blocks. The assumption is made * that the pattern and the version count are always located in the oob area * of the first block. |