1 files changed, 0 insertions, 152 deletions
diff --git a/board/idmr/idmr.c b/board/idmr/idmr.c
deleted file mode 100644
index 73660d802..000000000
--- a/board/idmr/idmr.c
+++ /dev/null
@@ -1,152 +0,0 @@
-/*
- * (C) Copyright 2000-2006
- * Wolfgang Denk, DENX Software Engineering, wd@denx.de.
- *
- * SPDX-License-Identifier:	GPL-2.0+
- */
-
-#include <common.h>
-#include <asm/immap.h>
-
-int checkboard (void) {
-	puts ("Board: iDMR\n");
-	return 0;
-};
-
-phys_size_t initdram (int board_type) {
-	int i;
-
-	/*
-	 * After reset, CS0 is configured to cover entire address space. We
-	 * need to configure it to its proper values, so that writes to
-	 * CONFIG_SYS_SDRAM_BASE and vicinity during SDRAM controller setup below do
-	 * now fall under CS0 (see 16.3.1 of the MCF5271 Reference Manual).
-	 */
-
-	/* Flash chipselect, CS0 */
-	/* ;CSAR0: Flash at 0xFF800000 */
-	mbar_writeShort(0x0080, 0xFF80);
-
-	/* CSCR0: Flash 6 waits, 16bit */
-	mbar_writeShort(0x008A, 0x1980);
-
-	/* CSMR0: Flash 8MB, R/W, valid */
-	mbar_writeLong(0x0084, 0x007F0001);
-
-
-	/*
-	 * SDRAM configuration proper
-	 */
-
-	/*
-	 * Address/Data Pin Assignment Reg.: enable address lines 23-21; do
-	 * not enable data pins D[15:0], as we have 16 bit port to SDRAM
-	 */
-	mbar_writeByte(MCF_GPIO_PAR_AD,
-			MCF_GPIO_AD_ADDR23 |
-			MCF_GPIO_AD_ADDR22 |
-			MCF_GPIO_AD_ADDR21);
-
-	/* No need to configure BS pins - reset values are OK */
-
-	/* Chip Select Pin Assignment Reg.: set CS[1-7] to GPIO */
-	mbar_writeByte(MCF_GPIO_PAR_CS, 0x00);
-
-	/* SDRAM Control Pin Assignment Reg. */
-	mbar_writeByte(MCF_GPIO_PAR_SDRAM,
-			MCF_GPIO_SDRAM_CSSDCS_00 | /* no matter: PAR_CS=0 */
-			MCF_GPIO_SDRAM_SDWE |
-			MCF_GPIO_SDRAM_SCAS |
-			MCF_GPIO_SDRAM_SRAS |
-			MCF_GPIO_SDRAM_SCKE |
-			MCF_GPIO_SDRAM_SDCS_01);
-
-	/*
-	 * Wait 100us.  We run the bus at 50MHz, one cycle is 20ns. So 5
-	 * iterations will do, but we do 10 just to be safe.
-	 */
-	for (i = 0; i < 10; ++i)
-		asm(" nop");
-
-
-	/* 1. Initialize DRAM Control Register: DCR */
-	mbar_writeShort(MCF_SDRAMC_DCR,
-			MCF_SDRAMC_DCR_RTIM(0x10) |	/* 65ns */
-			MCF_SDRAMC_DCR_RC(0x60));	/* 1562 cycles */
-
-
-	/*
-	 * 2. Initialize DACR0
-	 *
-	 * CL: 11 (CL=3: 0x03, 0x02; CL=2: 0x1)
-	 * CBM: cmd at A20, bank select bits 21 and up
-	 * PS: 16 bit
-	 */
-	mbar_writeLong(MCF_SDRAMC_DACR0,
-			MCF_SDRAMC_DACRn_BA(CONFIG_SYS_SDRAM_BASE>>18) |
-			MCF_SDRAMC_DACRn_BA(0x00) |
-			MCF_SDRAMC_DACRn_CASL(0x03) |
-			MCF_SDRAMC_DACRn_CBM(0x03) |
-			MCF_SDRAMC_DACRn_PS(0x03));
-
-	/* Initialize DMR0 */
-	mbar_writeLong(MCF_SDRAMC_DMR0,
-			MCF_SDRAMC_DMRn_BAM_16M |
-			MCF_SDRAMC_DMRn_V);
-
-
-	/* 3. Set IP bit in DACR to initiate PALL command */
-	mbar_writeLong(MCF_SDRAMC_DACR0,
-			mbar_readLong(MCF_SDRAMC_DACR0) |
-			MCF_SDRAMC_DACRn_IP);
-
-	/* Write to this block to initiate precharge */
-	*(volatile u16 *)(CONFIG_SYS_SDRAM_BASE) = 0xa5a5;
-
-	/*
-	 * Wait at least 20ns to allow banks to precharge (t_RP = 20ns). We
-	 * wait a wee longer, just to be safe.
-	 */
-	for (i = 0; i < 5; ++i)
-		asm(" nop");
-
-
-	/* 4. Set RE bit in DACR */
-	mbar_writeLong(MCF_SDRAMC_DACR0,
-			mbar_readLong(MCF_SDRAMC_DACR0) |
-			MCF_SDRAMC_DACRn_RE);
-
-	/*
-	 * Wait for at least 8 auto refresh cycles to occur, i.e. at least
-	 * 781 bus cycles.
-	 */
-	for (i = 0; i < 1000; ++i)
-		asm(" nop");
-
-	/* Finish the configuration by issuing the MRS */
-	mbar_writeLong(MCF_SDRAMC_DACR0,
-			mbar_readLong(MCF_SDRAMC_DACR0) |
-			MCF_SDRAMC_DACRn_MRS);
-
-	/*
-	 * Write to the SDRAM Mode Register A0-A11 = 0x400
-	 *
-	 * Write Burst Mode = Programmed Burst Length
-	 * Op Mode = Standard Op
-	 * CAS Latency = 3
-	 * Burst Type = Sequential
-	 * Burst Length = 1
-	 */
-	*(volatile u32 *)(CONFIG_SYS_SDRAM_BASE + 0x1800) = 0xa5a5a5a5;
-
-	return CONFIG_SYS_SDRAM_SIZE * 1024 * 1024;
-};
-
-
-int testdram (void) {
-
-	/* TODO: XXX XXX XXX */
-	printf ("DRAM test not implemented!\n");
-
-	return (0);
-}